ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,898, issued on Aug. 11, was assigned to TDK Corp. (Tokyo). "Magnetization rotation element, magnetoresistive effect element, and magnetic m... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,899, issued on Aug. 11, was assigned to TDK Corp. (Tokyo). "Magneto resistive element with laminate component and magnetic memory" was inve... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,900, issued on Aug. 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsinchu, Taiwan). "Resistive random access memory device and method ... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,901, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Bottom electrode structure in memor... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,902, issued on Aug. 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Resistive random-access memory device" was ... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,903, issued on Aug. 11, was assigned to VIRGINIA TECH INTELLECTUAL PROPERTIES INC. (Blacksburg, Va.). "Heat dissipation in resistive memori... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,904, issued on Aug. 11, was assigned to TRUSTEES OF DARTMOUTH COLLEGE (Hanover, N.H.). "Liquid metal printed 2D ultrahigh mobility conducti... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,905, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method of manufacturing semicon... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,906, issued on Aug. 11, was assigned to Versum Materials US LLC (Tempe, Ariz.). "Selective thermal atomic layer deposition" was invented by... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,907, issued on Aug. 11, was assigned to Yale University (New Haven, Conn.). "Control and localization of porosity in III-nitrides and metho... Read More